suface mount package. s mhop microelectronics c orp. a STF8235A symbol v ds v gs i dm 75 w a p d c 1.67 -55 to 150 i d units parameter 20 11 53 c/w v v 12 t a =25 c gate-source voltage drain-source voltage thermal characteristics product summary v dss i d r ds(on) (m ) max 20v 11a 6.9 @ vgs=4.5v features super high dense cell design for low r ds(on) . rugged and reliable. absolute maximum ratings ( t a =25 c unless otherwise noted ) limit drain current-continuous c -pulsed a c a maximum power dissipation operating junction and storage temperature range t j , t stg thermal resistance, junction-to-ambient r ja www.samhop.com.tw jul,08,2015 1 details are subject to change without notice. t a =25 c t a =70 c a t a =70 c w dual n-channel enhancement mode field effect transistor green product esd protected. g2 s1 s1 g1 s2 s2 1 2 3 4 5 6 bottom drain contact 8.8 1.07 g1 s1 s1 t d f n 2 x 5 2 s2 s2 ottom ie p i n 1 d1d2 ver 1.0 7.0 @ vgs=4.0v 7.6 @ vgs=3.1v 8.5 @ vgs=2.5v 7.2 @ vgs=3.7v
symbol min typ max units bv dss 20 v 1 i gss 10 ua v gs(th) 0.5 v r ds(on) drain-source on-state resistance i dss ua gate threshold voltage v ds =v gs , i d =1.0ma v ds =16v , v gs =0v v gs = 12v , v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t a =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =250ua on characteristics STF8235A 0.7 1.5 g fs 34 s q g 230 861 nc q gs 3536 nc q gd 2020 t d(on) ns t r 3.5 ns t d(off) 11 ns t f ns gate-drain charge switching characteristics gate-source charge v dd =20v i d =5.5a v gs =10v r gen =6 ohm total gate charge rise time turn-off delay time fall time turn-on delay time v ds =5v , i d =5.5a forward transconductance v gs =4.5v , i d =5.5a m ohm b v ds =20v,i d =11a, v gs =10v drain-source diode characteristics and maximum ratings v sd diode forward voltage v gs =0v,i s =11a 0.81 1.2 v www.samhop.com.tw jul,08,2015 2 5.3 6.9 4.0 ver 1.0 v gs =4.0v , i d =5.5a m ohm 5.4 7.0 v gs =3.7v , i d =5.5a m ohm v gs =2.5v , i d =5.5a m ohm 6.3 8.5 4.1 4.7 v gs =3.1v , i d =5.5a m ohm 5.7 7.6 4.3 5.5 7.2 4.2 nc 26.5 v ds =20v,i d =11a,v gs =4.5v notes a.pulse test:pulse width < 10us, duty cycle < 1%. b.guaranteed by design, not subject to production testing. c.drain current limited by maximum junction temperature. d.mounted on fr4 board of 1 inch 2 , 2oz. _ _
STF8235A www.samhop.com.tw jul,08,2015 3 0 0 20 120 100 80 60 40 150 125 100 75 50 25 175 t a - ambient temperature - c dt - percentage of rated power - % derating factor of forward bias safe operating area 0 0 0.5 3 2.5 2 1.5 1 150 125 100 75 50 25 175 t a - ambient temperature - c pt - total power dissipation - w total power dissipation vs. ambient temperature mounted on fr-4 board of 1 inch 2 , 1oz 0.1 1 10 10 0.1 100 v gs =10v single pulse t a =25 c r ds (on) limit 0.01 10 us forward bias safe operating area 100us 1ms 10m s 1s dc v ds - drain to source voltage - v i d - drain current - a 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 0.1 mounted on fr-4 board of 1 inch 2 , 1oz single pulse pw - pulse width - s rth(ch-a) - transient thermal resistance - c/w transient thermal resistance vs. pulse width 1 ver 1.0
STF8235A www.samhop.com.tw jul,08,2015 4 0 0 30 50 40 1 0.8 0.6 0.4 0.2 v ds - drain to source voltage - v i d - drain current - a drain current vs. drain to source voltage 0.01 0 0.1 100 10 1 2.5 2 1.5 1 0.5 v gs - gate to source voltage - v i d - drain current - a forward transfer characteristics 3 -50 0.7 0.6 0.5 150 100 50 0 t ch - channel temperature - c v gs(off) - gate to source cut-off voltage - v gatebto soure cut-off voltage vs. channel temperature i d = 1.0ma 0.01 0.01 0.1 100 10 1 100 10 1 0.1 i d - drain current - a . y fs . - forward transfer admittance - s forward transfer admittance vs. drain current 0.8 t a = -25 c 25 c 75 c 125 c 0 3 12 9 6 100 10 1 0.1 i d - drain current - a r ds(on) - drain to source on-state resistance - m drain to source on-state resistance vs. drain current 0 0 10 40 30 20 8 6 4 2 v gs - gate to source voltage - v r ds(on) - drain to source on-state resistance - m drain to source on-state resistance vs. gate to source voltage i d = 5.5 a 12 10 15 80 60 70 4.5 v 0.4 v gs = 4.5 v ver 1.0 v gs = 2.5 v 3.7 v 3.1 v 4.0 v 25 c 75 c 125 c t a = -25 c 3.1 v 3.7 v 2.5 v 4.0 v 20 10
STF8235A www.samhop.com.tw jul,08,2015 5 0 -50 3 12 9 6 150 100 50 0 t ch - channel temperature - c r ds(on) - drain to source on-state resistance - m drain to source on-state resistance vs. channel temperature i d = 5.5 a 15 ver 1.0 v gs = 2.5 v 3.1 v 3.7 v 4.0 v 4.5 v 10 0.1 100 1000 10 1 i d - drain current - a t d(on) , t r , t d(off) , t f - switching time - ns switching characteristics v dd = 16.0 v v gs = 4.5 v r g = 6 t d(off) t d(on) t r t f q g - gate charge -nc v gs - gate to drain voltage - v dynamic input characteristics 0 0 4 3 2 30 520 10 1 v dd = 4 v 10 v 16 v i d = 11 a 15 25 0.01 0.1 100 10 1 0.9 0.6 0.3 0 v f(s-d) - source to drain voltage - v i f - diode forward current - a source to drain diode forward voltage 1.8 1.5 1.2 v gs = 0 v
STF8235A www.samhop.com.tw jul,08,2015 6 package outline dimensions e pin #1 index area top view tdfn (2x5)-6l d tdfn b e l pin #1 identification chamfer 0.300 x 45 o bottom view a a1 side view symbols millimeters inches a a1 d e d1 e1 b e l min max min max 0.000 0.050 1.900 2.100 4.900 5.100 1.400 1.500 3.000 3.100 0.200 0.300 0.450 0.550 0.500 bsc 0.000 0.002 0.075 0.083 0.191 0.201 0.055 0.059 0.118 0.122 0.008 0.012 0.018 0.022 0.020 bsc 1 2 3 6 5 4 d1 e1 a a1 a3 a3 0.203 ref. 0.008 ref. 0.700 0.800 0.028 0.031 ver 1.0
STF8235A www.samhop.com.tw jul,08,2015 7 tdfn 2x5-6l pin 1 top marking definition 8235a xxxxxx wafer lot no. production date (1,2 ~ 9, a,b...) production month (1,2 ~ 9, a,b,c) production year (2009 = 9, 2010 = a...) product no. smc internal code no.(a,b...z) ver 1.0
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